Nitride semiconductor light-emitting element having superior current spreading effect and method for manufacturing same
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United States of America Patent
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Aug 4, 2015
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Jul 10, 2014
app pub date -
Aug 2, 2012
filing date -
Aug 8, 2011
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Abstract
Disclosed are a nitride semiconductor light-emitting element having a superior current spreading effect as a result of using a current spreading part containing current spreading impurities, and a method for manufacturing same. The nitride semiconductor light-emitting element according to the present invention comprises: an n-type nitride layer; a current spreading part, which is formed from nitride comprising current spreading impurities, and which is disposed on the n-type nitride layer; an activation layer disposed on the current spreading part; and a p-type nitride layer disposed on the activation layer, wherein the current spreading impurities comprise carbon (C).
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