Method and system for autotuning of RF match
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United States of America Patent
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Aug 4, 2015
Grant Date -
May 16, 2013
app pub date -
Dec 26, 2011
filing date -
Nov 16, 2011
priority date (Note) -
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Abstract
A reactive correction to chamber impedance changes without the need to change the process recipe is disclosed. The reactive correction may be done automatically and repeatedly during processing. A control of RF power application to a plasma processing chamber is performed, so as to minimize reflected power and efficiently apply the RF power to the plasma. Autotuning of the RF power application is enabled without modifying a qualified process recipe. The autotuning can be applied using frequency matching and RF matching network tuning.
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