Low volumetric density betavoltaic power device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Aug 4, 2015
Grant Date -
Feb 7, 2013
app pub date -
Jun 10, 2012
filing date -
Aug 7, 2011
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
One example is a betavoltaic cell that has been fabricated using a semiconductor that includes, but is not limited to, Silicon Carbide (SiC), Silicon (Si), Gallium Arsenide (GaAs), Indium Gallium Arsenide (InGaAs), Gallium Nitide (GaN), Gallium Phosphide (GaP), or Diamond, and uses through wafer via holes or other fabrication techniques to form both positive (+ve) and negative (−ve) contacts on the front and back sides of the cell. In another example, several of these cells with +ve and −ve contacts on the front and back sides of the cell are arranged vertically and/or horizontally to form customized parallel and/or series combinations that produce a close packed, energy dense betavoltaic composite unit, with increased power outputs relative to a single cell. In another example, tritium or a metal tritide is used as the radioisotope source for the cells.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully