Abrasive-free planarization for EUV mask substrates
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Aug 4, 2015
Grant Date -
Aug 15, 2013
app pub date -
Jan 25, 2013
filing date -
Jan 27, 2012
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A process for abrasive-free chemical mechanical planarization of silicon thin film coated EUV mask substrates is disclosed. The process removes bumps and pits on the substrate thereby mitigating reflective errors in the mask. The process employs a two-step polishing procedure, in which the second step is abrasive-free and uses an amine or amine salt as the polishing agent.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully