Composition for manufacturing doped or undoped zinc oxide thin film and method for manufacturing zinc oxide thin film using same

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United States of America Patent

PATENT NO 9096441
APP PUB NO 20120094019A1
SERIAL NO

13265544

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Abstract

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Disclosed is a composition for forming a zinc oxide thin film, which contains an organic zinc compound as a starting material, is not ignitable, and can be easily handled. The composition for forming a zinc oxide thin film is capable of forming a transparent zinc oxide thin film which is not doped or doped with a group 3B element by being heated at 300° C. or less. Also disclosed is a method for obtaining a transparent zinc oxide thin film, which is not doped or doped with a group 3B element, using the composition. Specifically, the composition for forming a zinc oxide thin film contains a product which is obtained by partially hydrolyzing an organic zinc compound by adding water to the organic zinc compound or a solution of the organic zinc compound and a group 3B element compound. In cases when a group 3B element compound is contained, the molar ratio of the group 3B element compound to the organic zinc compound is within the range of 0.005-0.3. The composition is applied to a substrate surface and then heated, thereby forming a zinc oxide thin film which is doped with the group 3B element.

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Patent Owner(s)

Patent OwnerAddress
TOSOH FINECHEM CORPORATIONSHUNAN-SHI YAMAGUCHI 746-0006

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Haga, Kenichi Yamaguchi, JP 16 2498
Inaba, Koichiro Yamaguchi, JP 11 433
Tokudome, Kouichi Yamaguchi, JP 1 6
Toyota, Kouji Yamaguchi, JP 11 26

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