ICP source design for plasma uniformity and efficiency enhancement
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United States of America Patent
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Jul 28, 2015
Grant Date -
Apr 25, 2013
app pub date -
Dec 26, 2011
filing date -
Oct 19, 2011
priority date (Note) -
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Abstract
An ICP A plasma reactor having an enclosure wherein at least part of the ceiling forms a dielectric window. A substrate support is positioned within the enclosure below the dielectric window. An RF power applicator is positioned above the dielectric window to radiate RF power through the dielectric window and into the enclosure. A plurality of gas injectors are distributed uniformly above the substrate support to supply processing gas into the enclosure. A circular baffle is situated inside the enclosure and positioned above the substrate support but below the plurality of gas injectors so as to redirect flow of the processing gas.
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