Optoelectronic devices including heterojunction and intermediate layer
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United States of America Patent
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Jul 28, 2015
Grant Date -
Aug 16, 2012
app pub date -
Apr 19, 2012
filing date -
Apr 19, 2012
priority date (Note) -
Withdrawn
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Abstract
Embodiments generally relate to optoelectronic semiconductor devices such as solar cells. In one aspect, a device includes an absorber layer made of gallium arsenide (GaAs) and having only one type of doping. An emitter layer is located closer than the absorber layer to a back side of the device and is made of a different material and having a higher bandgap than the absorber layer. A heterojunction is formed between the emitter layer and the absorber layer, and a p-n junction is formed between the emitter layer and the absorber layer and at least partially within the different material at a location offset from the heterojunction. An intermediate layer is located between the absorber layer and the emitter layer and provides the offset of the p-n junction from the heterojunction, and includes a graded layer and an ungraded back window layer.
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