Transistor structure having a trench drain
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United States of America Patent
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Jul 28, 2015
Grant Date -
Jul 3, 2014
app pub date -
Mar 4, 2014
filing date -
Oct 9, 2008
priority date (Note) -
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Abstract
A semiconductor device is formed having a trench adjacent to a current carrying region of the device. The trench is formed having a depth greater than the depth of a tub region of the device. Increasing the trench depth moves a region of higher field strength from the tub region to a region along the trench. The region along the trench does not have a junction and may withstand the higher field strength.
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