Semiconductor devices with 2DEG and 2DHG
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United States of America Patent
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Jul 21, 2015
Grant Date -
Aug 29, 2013
app pub date -
Jun 7, 2011
filing date -
Jul 28, 2010
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Abstract
A semiconductor device comprises three semiconductor layers. The semiconductor layers are arranged to form a 2DHG and a 2DEG separated by a polarization layer. The device comprises a plurality of electrodes: first and second electrodes electrically connected to the 2DHG so that current can flow between them via the 2DHG and a third electrode electrically connected to the 2DEG so that when a positive voltage is applied to the third electrode, with respect to at least one of the other electrodes, the 2DEG and the 2DHG will be at least partially depleted.
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