Method of analyzing nitride semiconductor layer and method of manufacturing nitride semiconductor substrate using the analysis method
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United States of America Patent
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Jul 21, 2015
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Feb 27, 2014
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Aug 26, 2013
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Aug 27, 2012
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Abstract
A method of analyzing a nitride semiconductor layer in which a mixing ratio at a ternary mixed-crystal nitride semiconductor layer can be analyzed non-destructively, simply, and precisely, even its surface is covered with a cap layer is provided. The nitride semiconductor layer having an AN layer or a BN layer with a thickness of 0.5 to 10 nm that is stacked on an AxB1-xN layer (A and B: 13 group elements, 0≦x≦1) is subjected to reflection spectroscopy to obtain a reflection spectrum of the AxB1-xN layer. Let an energy value in a peak position of the reflection spectrum be a band gap energy Egap, and let a band gap energy value of AxB1-xN (x=1) be EA and a band gap energy value of AxB1-xN (x=0) be EB, x is calculated from Equation Egap=(1−x)EB+xEA−bx(1−x) (where b is bowing parameter corresponding to A and B).
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