Semiconductor devices and power conversion systems
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United States of America Patent
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Jul 14, 2015
Grant Date -
Jul 12, 2012
app pub date -
Jan 11, 2012
filing date -
Jan 12, 2011
priority date (Note) -
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Abstract
A semiconductor device includes first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type that is formed near a surface of the first semiconductor layer; a first main electrode that is electrically connected to the second semiconductor layer; a third semiconductor layer of the second conductivity type that neighbors the first semiconductor layer; a fourth semiconductor layer of the first conductivity type that is selectively disposed in an upper portion of the third semiconductor layer; a second main electrode that is electrically connected to the third semiconductor layer and the fourth semiconductor layer; a trench whose side face is in contact with the third semiconductor layer and the fourth semiconductor layer; a gate electrode that is formed along the side face of the trench by a sidewall of polysilicon; and a polysilicon electrode.
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