Graphene base transistor having compositionally-graded collector barrier layer
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United States of America Patent
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Jul 14, 2015
Grant Date -
Nov 22, 2012
app pub date -
May 17, 2012
filing date -
May 17, 2011
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Abstract
A junction transistor, comprising, on a substrate an emitter layer, a collector layer, and a base layer that comprises a graphene layer, wherein an emitter barrier layer is arranged between the base layer and the emitter layer, and a collector barrier layer is arranged between the base and the collector layers and adjacent to the graphene layer, characterized in that the collector barrier layer is a compositionally graded material layer, which has an electron affinity that decreases in a direction pointing from the base layer to the collector layer.
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