Semiconductor device and method for manufacturing semiconductor device

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United States of America Patent

PATENT NO 9082707
APP PUB NO 20130240909A1
SERIAL NO

13880584

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Abstract

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A semiconductor device includes a semiconductor element substrate, wherein an electrode pattern is formed on one surface of an insulating substrate and a back-surface electrode is formed on the other surface of the insulating substrate; a stress-relaxation adhesive layer made of resin that covers at least a part of a portion of the surface of the insulating substrate where the electrode pattern and the back-surface electrode are not formed; and a semiconductor element affixed, using a bonding material, to the surface of the electrode pattern opposite the insulating substrate, and a first sealing resin member which covers the semiconductor element and the semiconductor element substrate, and a modulus of elasticity of the stress-relaxation adhesive layer is lower than that of the first sealing resin member.

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Patent Owner(s)

Patent OwnerAddress
MITSUBISHI ELECTRIC CORPORATION7-3 MARUNOUCHI 2-CHOME CHIYODA-KU TOKYO 1008310 JAPAN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hiramatsu, Seiki Tokyo, JP 15 196
Terai, Mamoru Tokyo, JP 20 194

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