HEMT structure with iron-doping-stop component and methods of forming
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United States of America Patent
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Jul 7, 2015
Grant Date -
Jan 1, 2015
app pub date -
Jun 27, 2013
filing date -
Jun 27, 2013
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Abstract
An iron-doped high-electron-mobility transistor (HEMT) structure includes a substrate, a nucleation layer over the substrate, and a buffer layer over the nucleation layer. The gallium-nitride buffer layer includes a iron-doping-stop layer having a concentration of iron that drops from a juncture with an iron-doped component of the buffer layer over a thickness that is relatively small compared to that of the iron-doped component. The iron-doping-stop layer is formed at lower temperature compared to the temperature at which the iron-doped component is formed. The iron-doped HEMT structure also includes a channel layer over the buffer layer. A carrier-supplying barrier layer is formed over the channel layer.
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