Semiconductor device and a method of manufacturing same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9076774
APP PUB NO 20130313711A1
SERIAL NO

13894756

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Abstract

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In a semiconductor device where a metal circuit layer is disposed over a main planar surface of an insulating substrate, a semiconductor chip is connected by way of a solder over the metal circuit layer, and a metal wiring is connected over the metal circuit layer, in which a solder flow prevention area comprising a linear oxide material is formed between the semiconductor chip and the ultrasonic metal bonding region over the metal circuit layer.

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Patent Owner(s)

Patent OwnerAddress
HITACHI POWER SEMICONDUCTOR DEVICE LTD2-2 OMIKA-CHO 5-CHOME HITACHI-SHI IBARAKI

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hiyoshi, Michiaki Yokohama, JP 27 431
Kumagai, Yukihiro Hitachinaka, JP 17 245

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