Photomask blank, photomask, and method for manufacturing photomask blank

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United States of America Patent

PATENT NO 9075314
APP PUB NO 20140057199A1
SERIAL NO

13944251

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Abstract

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A photomask blank for producing a photomask to which an ArF excimer laser light is applied. The blank includes a light transmissive substrate on which a thin film having a multilayer structure is provided. The thin film has a light-shielding film in which a back-surface antireflection layer, a light-shielding layer and a front-surface antireflection layer are laminated in this order. The light-shielding layer comprises chromium and nitrogen, and the chromium content is more than 50 atomic %. The front-surface antireflection layer and the back-surface antireflection layer each has an amorphous structure made of a material comprising chromium, nitrogen, oxygen and carbon. The chromium content ratio of the front-surface antireflection layer and the back-surface antireflection layer is 40 atomic % or less. A first sum of nitrogen content and oxygen content of the back-surface antireflection layer is less than a second sum of nitrogen content and oxygen content of the front-surface antireflection layer.

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Patent Owner(s)

Patent OwnerAddress
HOYA CORPORATIONTOKYO JAPAN

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hashimoto, Masahiro Tokyo, JP 99 970
Hosoya, Morio Tokyo, JP 20 295
Iwashita, Hiroyuki Tokyo, JP 55 479
Kominato, Atsushi Tokyo, JP 35 146
Shishido, Hiroaki Tokyo, JP 102 766

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