Method and means for coupling high-frequency energy to and/or from the nanoscale junction of an electrically-conductive tip with a semiconductor
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United States of America Patent
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Jul 7, 2015
Grant Date -
Mar 5, 2015
app pub date -
Mar 24, 2014
filing date -
Mar 29, 2013
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Abstract
A method for coupling high-frequency energy, in particular for microwave circuits, to a nanoscale junction involves placing a bias-T outside of the tip and sample circuits of a scanning probe microscope and connecting a portion of a sample of analyzed semi-conductor through an outer shielding layer of coaxial cable so as to complete a circuit with minimal involvement of the sample. The bias-T branches into high and low-frequency circuits, both of which are completed and, at least the high-frequency circuit, does not rely on grounding of implements or other structure to accomplish said completion.
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