Method for depositing a thin layer and product thus obtained
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United States of America Patent
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Jul 7, 2015
Grant Date -
Mar 25, 2010
app pub date -
Jan 4, 2008
filing date -
Jan 5, 2007
priority date (Note) -
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Abstract
One subject of the invention is a process for the treatment of at least one thin continuous film deposited on a first side of a substrate, characterized in that said at least one thin film is raised to a temperature of at least 300° C. while maintaining a temperature not exceeding 150° C. on the opposite side of said substrate to said first side, so as to increase the degree of crystallization of said thin film while keeping it continuous and without a step of melting said thin film.
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