Electrode contact structure of light-emitting diode with improved roughness
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United States of America Patent
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Jun 30, 2015
Grant Date -
Nov 28, 2013
app pub date -
Jul 23, 2013
filing date -
May 23, 2012
priority date (Note) -
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Abstract
An LED electrode contact structure for an LED is provided. The LED includes a plurality of N-type electrodes, an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, a mirror layer, a buffer layer, a binding layer, a permanent substrate and a P-type electrode that are stacked in sequence. The N-type semiconductor layer has an irregular surface and a plurality of contact platforms. The contact platforms are formed and distributed on the N-type semiconductor layer in a patterned arrangement, and the irregular surface is formed at areas on the N-type semiconductor layer without the contact platforms. The N-type electrodes are respectively formed on the contact platforms. The contact platforms have roughness between 0.01 μm and 0.1 μm, such that not only voids are not generated but also good adhesion is provided to prevent carrier confinement and disengagement. Therefore, satisfactory electrical contact is ensured to thereby increase light emitting efficiency.
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