Extrinsic gettering on semiconductor devices

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United States of America Patent

PATENT NO 9064836
SERIAL NO

12852643

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Abstract

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A semiconductor wafer, die and semiconductor package formed therefrom are disclosed, where the inactive surface of the wafer has an extrinsic gettering pattern formed from a texturing process. In examples, the texturing process follows a polishing process that removes stress concentration point from the inactive surface of the wafer.

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Patent Owner(s)

Patent OwnerAddress
SANDISK SEMICONDUCTOR (SHANGHAI) CO LTDNO 388 EAST JIANGCHUAN ROAD SHANGHAI MINHANG DISTRICT MUNICIPAL DISTRICT SHANGHAI CITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bhagath, Shrikar San Jose, US 47 338
Chiu, Chin-Tien Taichung, TW 83 470
Qian, Kaiyou Shanghai, CN 8 59
Zhang, Yuang Shanghai, CN 9 40
Zhong, Lu Shanghai, CN 2 3

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