Programming at least one multi-level phase change memory cell
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United States of America Patent
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Jun 23, 2015
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app pub date -
Mar 23, 2011
filing date -
Mar 30, 2010
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Abstract
A method is provided that comprises a step of programming the PCM cell to have a respective definite cell state by at least one current pulse flowing to the PCM cell, said respective definite cell state being defined at least by a respective definite resistance level, a step of controlling said respective current pulse by a respective bitline pulse and a respective wordline pulse, and a step of controlling said respective bitline pulse and said respective wordline pulse dependent on an actual resistance value of the PCM cell and a respective reference resistance value being defined for the definite resistance level.
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