Thermal treatment method of silicon wafer and silicon wafer
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United States of America Patent
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Jun 16, 2015
Grant Date -
Sep 27, 2012
app pub date -
Mar 15, 2012
filing date -
Mar 22, 2011
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Abstract
There is provided a thermal treatment method of a silicon wafer. The method includes the successive steps of: (a) terminating silicon atoms existing on an active surface of the silicon wafer with hydrogen, wherein the active surface is mirror-polished, and a semiconductor device is to be formed on the active surface; (b) terminating the silicon atoms existing on the active surface of the silicon wafer with fluorine; (c) rapidly heating the silicon wafer to a first temperature under an inert gas atmosphere or a reducing gas atmosphere, wherein the first temperature is in a range of 1300° C. to 1400° C.; (d) holding the silicon wafer at the first temperature for a certain time; and (e) rapidly cooling the silicon wafer.
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