FinFET device
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United States of America Patent
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Jun 16, 2015
Grant Date -
Jun 26, 2014
app pub date -
Mar 3, 2014
filing date -
Nov 10, 2011
priority date (Note) -
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Abstract
A method for forming a field effect transistor device includes patterning an arrangement of fin portions on a substrate, patterning a gate stack portion over portions of the fin portions and the substrate, growing an epitaxial material from the fin portions that electrically connects portions of adjacent fin structures, and removing a portion of the gate stack portion to expose a portion of the substrate.
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