Polishing pad, composition for the manufacture thereof, and method of making and using
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United States of America Patent
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Jun 16, 2015
Grant Date -
Jun 2, 2011
app pub date -
May 27, 2010
filing date -
May 27, 2009
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Abstract
A polyurethane layer for forming a polishing pad for a semiconductor wafer is described, wherein the polyurethane layer comprises: a foamed polyurethane, wherein the polyurethane foam has a density of about 640 to about 960 kg/m3, and a plurality of cells having an average diameter of about 20 to about 200 micrometers; and particles of a hydrophobic polymer having a critical surface energy of less than 35 mN/m and having a median particle size of 3 to 100 micrometers. Polishing pads as well as methods for polishing are also described.
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