Method and system for integrated MEMS and NEMS using deposited thin films having pre-determined stress states
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United States of America Patent
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Jun 9, 2015
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May 19, 2011
filing date -
May 19, 2010
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Abstract
A method and system are disclosed for controlling the state of stress in deposited thin films on microelectronics wafers for the integration of MEMS and NEMS devices with microelectronics. According to the method and system, various process parameters including: process pressure; substrate temperature; deposition rate; and ion-beam energies (controlled via the ion beam current, voltage, signal frequency and duty cycle) are varied using a step-by-step methodology to arrive at a pre-determined desired state of stress in thin films deposited using PVD at low temperatures and desired stress states onto wafers or substrates having microelectronics processing performed on them.
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