System and method of ion neutralization with multiple-zoned plasma flood gun
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United States of America Patent
Stats
-
Jun 9, 2015
Grant Date -
Oct 10, 2013
app pub date -
Apr 4, 2012
filing date -
Apr 4, 2012
priority date (Note) -
In Force
status (Latency Note)
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Abstract
An apparatus comprises a plasma flood gun for neutralizing a positive charge buildup on a semiconductor wafer during a process of ion implantation using an ion beam. The plasma flood gun comprises more than two arc chambers, wherein each arc chamber is configured to generate and release electrons into the ion beam in a respective zone adjacent to the semiconductor wafer.
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International Classification(s)
- 2012 Application Filing Year
- G21G Class
- 45 Applications Filed
- 35 Patents Issued To-Date
- 77.78 % Issued To-Date
Cited Art Landscape
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- 0 Citation Count
- G21G Class
- 0 % this patent is cited more than
- 10 Age
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| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Dec 9, 2026 |
