Spin torque transfer magnetic tunnel junction intelligent sensing

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United States of America Patent

PATENT NO 9053071
APP PUB NO 20130245999A1
SERIAL NO

13420890

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Abstract

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Sensor circuitry including probabilistic switching devices, such as spin-transfer torque magnetic tunnel junctions (STT-MTJs), is configured to perform ultra-low power analog to digital conversion and compressive sensing. The analog to digital conversion and compressive sensing processes are performed simultaneously and in a manner that is native to the devices due to their probabilistic switching characteristics.

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Patent Owner(s)

Patent OwnerAddress
QUALCOMM INCORPORATED5775 MOREHOUSE DRIVE SAN DIEGO CA 92121-1714

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Banerjee, Abhishek San Diego, US 60 301
Madala, Raghu Sagar San Diego, US 13 125
Pan, Chengzhi San Diego, US 12 102
Wu, Wenqing San Diego, US 51 486
Yuen, Kendrick H San Diego, US 10 153

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