Method of obtaining patters in an antireflective layer
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United States of America Patent
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Jun 2, 2015
Grant Date -
Jul 3, 2014
app pub date -
Dec 27, 2013
filing date -
Dec 28, 2012
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Abstract
The invention relates to the field of production in thin coatings of electronic devices and/or MEMS and relates to an improved method for forming a pattern in a thin SiARC anti-reflective coating, comprising the doping by deposition of such SiARC coating covered with a resist pattern through a protective coating of the resist pattern, then etching the doped zones of the SiARC coating (FIG. 3c).
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