Unipolar heterojunction depletion-layer transistor
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United States of America Patent
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May 26, 2015
Grant Date -
Dec 22, 2011
app pub date -
Dec 11, 2009
filing date -
Dec 22, 2008
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Abstract
A depletion-layer transistor comprising a base, an emitter and a collector, in which the emitter contains a tunnel diode which permits a tunnel current of charge carriers from the emitter in the direction of the collector when an emitter-base voltage above a first threshold voltage is applied in the direction of current flow, and in which the base contains a graphene layer.
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