Germanium photodetector having absorption enhanced under slow-light mode

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United States of America Patent

PATENT NO 9035409
APP PUB NO 20150069565A1
SERIAL NO

14157758

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A novel germanium (Ge) photodetector is disclosed, containing a stripe layer including Ge, a substrate supporting the stripe layer, and P and N regions, which are located inside the substrate and near opposite sides of the stripe. The stripe layer containing Ge for light absorption is operated in a slow-light mode by adding combinations of a gradual taper indent structure and a periodic indent structure to reduce light scatterings and to control light group velocity inside the stripe. Due to the slower light traveling velocity inside the stripe, the absorption coefficient of the stripe containing Ge is upgraded to be 1 to 2 orders of magnitude larger than that of a traditional bulk Ge at L band, and so the absorption coefficient reaches more than 1 dB/μm at the wavelength of 1600 nm.

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Patent Owner(s)

Patent OwnerAddress
FORELUX INCTAIPEI CITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Na, Yun-Chung Hsinchu, TW 127 2199

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