Thin-film transistor and zinc oxide-based sputtering target for the same
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United States of America Patent
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May 19, 2015
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Jan 2, 2014
app pub date -
Jun 28, 2013
filing date -
Jun 29, 2012
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Abstract
A thin-film transistor includes a metal electrode and a zinc oxide-based barrier film that blocks a material from diffusing out of the metal electrode. The zinc oxide-based barrier film is made of zinc oxide doped with indium oxide, the content of the indium oxide ranging, by weight, 1 to 50 percent of the zinc oxide-based barrier film. A zinc oxide-based sputtering target for deposition of a barrier film of a thin-film transistor is made of zinc oxide doped with indium oxide, the content of the indium oxide ranging, by weight, 1 to 50 percent of the zinc oxide-based sputtering target.
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