Tool configuration and method for extreme ultra-violet (EUV) patterning with a deformable reflective surface

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United States of America Patent

PATENT NO 9034665
APP PUB NO 20150104745A1
SERIAL NO

14051683

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Abstract

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Some embodiments of the present disclosure relate to a tool configuration and method for EUV patterning with a deformable reflective surface comprising a mirror or reticle. A radiation source provides EUV radiation which is reflected off the deformable reflective surface to transfer a reticle pattern to a semiconductor workpiece. A metrology tool measures a residual vector formed between a first shape of the semiconductor workpiece and a second shape of the reticle pattern. And, a topology of the deformable reflective surface is changed based upon the residual vector to minimize a total magnitude of the residual vector.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTDNO 8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Chia-Chen Hsinchu, TW 103 951
Chen, Tzu-Hsiang Zhubei, TW 14 80
Hsu, Chia-Hao Hsinchu, TW 116 726
Huang, Chia-Ching Su-ao Township, TW 47 348

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