Spin dependent tunneling devices with magnetization states based on stress conditions
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United States of America Patent
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May 12, 2015
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Mar 7, 2013
app pub date -
Sep 14, 2012
filing date -
Mar 9, 2007
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Abstract
A spin dependent tunneling device includes an electrically insulative material intermediate layer, a magnetization reference layer on one of the opposite major surfaces of the intermediate layer, and a memory film of a magnetostrictive, anisotropic ferromagnetic material on the other of the opposite major surfaces of the intermediate layer. The memory film material has a magnetization directed at an angle with respect to the relatively fixed direction of the magnetization reference layer, due to an effective magnetic bias field being present, in a first kind of stress condition with unequal coercivities for external magnetic fields applied in opposite directions. In one kind of stress condition the device has a coercivity with a magnitude exceeding that of the effective magnetic bias field, and in another kind of stress condition, the device has a coercivity with a magnitude less than that of the effective magnetic bias field.
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