Tunneling field-effect transistor with direct tunneling for enhanced tunneling current
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United States of America Patent
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May 12, 2015
Grant Date -
Sep 5, 2013
app pub date -
Apr 4, 2013
filing date -
Mar 8, 2010
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Abstract
Horizontal and vertical tunneling field-effect transistors (TFETs) having an abrupt junction between source and drain regions increases probability of direct tunneling of carriers (e.g., electrons and holes). The increased probability allows a higher achievable on current in TFETs having the abrupt junction. The abrupt junction may be formed by placement of a dielectric layer or a dielectric layer and a semiconductor layer in a current path between the source and drain regions. The dielectric layer may be a low permittivity oxide such as silicon oxide, lanthanum oxide, zirconium oxide, or aluminum oxide.
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