Ultratough single crystal boron-doped diamond

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United States of America Patent

PATENT NO 9023306
SERIAL NO

12435565

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Abstract

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The invention relates to a single crystal boron doped CVD diamond that has a toughness of at least about 22 MPa m1/2. The invention further relates to a method of manufacturing single crystal boron doped CVD diamond. The growth rate of the diamond can be from about 20-100 μm/h.

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Patent Owner(s)

Patent OwnerAddress
CARNEGIE INSTITUTION OF WASHINGTON1530 P STREET NW WASHINGTON DC 20005

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hemley, Russell J Washington, US 23 167
Liang, Qi Washington, US 99 1364
Mao, Ho-Kwang Washington, US 28 182
Yan, Chih-Shiue Washington, US 23 161

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