Thin film structure for high density inductors and redistribution in wafer level packaging
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United States of America Patent
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Apr 28, 2015
Grant Date -
Feb 14, 2013
app pub date -
Aug 10, 2012
filing date -
Aug 11, 2011
priority date (Note) -
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Abstract
Disclosed is a package that includes a wafer substrate and a metal stack seed layer. The metal stack seed layer includes a titanium thin film outer layer. A resist layer is provided in contact with the titanium thin film outer layer of the metal stack seed layer, the resist layer forming circuitry. A method for manufacturing a package is further disclosed. A metal stack seed layer having a titanium thin film outer layer is formed. A resist layer is formed so as to be in contact with the titanium thin film outer layer of the metal stack seed layer, and circuitry is formed from the resist layer.
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