Vertically structured group III nitride semiconductor LED chip and method for manufacturing the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Apr 21, 2015
Issued Date -
N/A
app pub date -
Sep 4, 2013
filing date -
Nov 5, 2009
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method for manufacturing vertically structured Group III nitride semiconductor LED chips includes a step of forming a light emitting laminate on a growth substrate; a step of forming a plurality of separate light emitting structures by partially removing the light emitting laminate to partially expose the growth substrate; a step of forming a conductive support on the plurality of light emitting structures; a step of lifting off the growth substrate from the plurality of light emitting structures; and a step of cutting the conductive support thereby singulating a plurality of LED chips each having the light emitting structure. The step of partially removing the light emitting laminate is performed such that each of the plurality of light emitting structures has a top view shape of a circle or a 4n-gon (“n” is a positive integer) having rounded corners.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully