Nitride semiconductor light-emitting element having superior leakage current blocking effect and method for manufacturing same
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United States of America Patent
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Apr 14, 2015
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Jun 19, 2014
app pub date -
Aug 2, 2012
filing date -
Aug 8, 2011
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Abstract
Disclosed are a nitride semiconductor light-emitting element and a method for manufacturing the same. The nitride semiconductor light-emitting element according to the present invention comprises: a current blocking part disposed between a substrate and an n-type nitride layer; an activation layer disposed on the top surface of the n-type nitride layer; and a p-type nitride layer disposed on the top surface of the activation layer, wherein the current blocking part is an AlxGa(1-x)N layer, and the Al content x times layer thickness (μm) is in the range of 0.01-0.06. Accordingly, the nitride semiconductor light-emitting element can increase the luminous efficiency by having a current blocking part which prevents current leakage from occurring.
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