Method for providing lateral thermal processing of thin films on low-temperature substrates
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United States of America Patent
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Apr 14, 2015
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Jan 16, 2014
app pub date -
Sep 11, 2013
filing date -
Jun 2, 2010
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Abstract
A method for thermally processing a minimally absorbing thin film in a selective manner is disclosed. Two closely spaced absorbing traces are patterned in thermal contact with the thin film. A pulsed radiant source is used to heat the two absorbing traces, and the thin film is thermally processed via conduction between the two absorbing traces. This method can be utilized to fabricate a thin film transistor (TFT) in which the thin film is a semiconductor and the absorbers are the source and the drain of the TFT.
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