Power semiconductor module
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United States of America Patent
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Apr 7, 2015
Grant Date -
Jan 3, 2013
app pub date -
Jun 26, 2012
filing date -
Jun 29, 2011
priority date (Note) -
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Abstract
The respective main electrodes of the semiconductor switching elements such as IGBTs, which are respectively mounted on the plurality of insulating boards, are electrically connected to each other via the conductor member. This configuration makes it possible to suppress the occurrence of the resonant voltage due to the junction capacity and the parasitic inductance of each semiconductor switching element.
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