Semiconductor structure
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United States of America Patent
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Apr 7, 2015
Grant Date -
Mar 12, 2015
app pub date -
Oct 1, 2013
filing date -
Sep 10, 2013
priority date (Note) -
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Abstract
A semiconductor structure includes a carrier, a first protective layer, a second protective layer, and a third protective layer. A first surface of the first protective layer comprises a first anti-stress zone. A first extension line from a first bottom edge intersects with a second extension line from a second bottom edge to form a first base point. A first projection line is formed on the first surface, an extension line of the first projection line intersects with the second bottom edge to form a first intersection point, a second projection line is formed on the first surface, and an extension line of the second projection line intersects with the first bottom edge to form a second intersection point. A zone by connecting the first base point, the first intersection point and the second intersection point is the first anti-stress zone.
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