Semiconductor substrate, method for producing semiconductor substrate, substrate for semiconductor growth, method for producing substrate for semiconductor growth, semiconductor element, light-emitting element, display panel, electronic element, solar cell element, and electronic device

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United States of America Patent

PATENT NO 9000449
APP PUB NO 20120187422A1
SERIAL NO

13394282

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Abstract

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A semiconductor substrate that includes a semiconductor layer that exhibits high crystallinity includes a graphite layer formed of a heterocyclic polymer obtained by condensing an aromatic tetracarboxylic acid and an aromatic tetramine, and a semiconductor layer that is grown on the surface of the graphite layer, or includes a substrate that includes a graphite layer formed of a heterocyclic polymer obtained by condensing an aromatic tetracarboxylic acid and an aromatic tetramine on its surface, a buffer layer that is grown on the surface of the graphite layer, and a semiconductor layer that is grown on the surface of the buffer layer.

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Patent Owner(s)

Patent OwnerAddress
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYTOKYO
THE UNIVERSITY OF TOKYOTOKYO
TOKAI CARBON CO LTD2-3 KITA-AOYAMA 1-CHOME MINATO-KU TOKYO 107-8636

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fujioka, Hiroshi Tokyo, JP 58 679
Hatori, Hiroaki Tsukuba, JP 9 37
Hirasaki, Tetsuro Tokyo, JP 1 9
Ue, Hitoshi Tokyo, JP 4 20
Yamashita, Junya Tsukuba, JP 17 19

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