Sense node capacitive structure for time of flight sensor
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United States of America Patent
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Apr 7, 2015
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app pub date -
Jul 16, 2010
filing date -
Jul 31, 2009
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Abstract
An increased sense node capacitance, mainly for 3D time-of-flight (TOF) applications, includes a storage structure that combines the advantages of gate and diffusion capacitance in order to improve the overall capacitance. The storage structure provides higher capacitance per unit area and accordingly a better fill-factor/sensitivity of the pixel; improved noise behaviour because of the use of gate capacitances, better protection against interacting signals and thus better signal quality.
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