Process for bonding two substrates

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United States of America Patent

PATENT NO 8999090
APP PUB NO 20130139946A1
SERIAL NO

13749471

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Abstract

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The invention relates to a method for bonding two substrates, in particular, two semiconductor substrates that, in order to be able to improve the reliability of the process, provides the step of providing a gaseous flow over the bonding surfaces of the substrates. The gaseous flow is preferably a laminar flow that is essentially parallel to the bonding surfaces of the substrates, and has a temperature in a range of from room temperature up to 100° C.

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Patent Owner(s)

Patent OwnerAddress
SOITECPARC TECHNOLOGIQUE DES FONTAINES CHEMIN DES FRANQUES 38190 BERNIN 38190

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Colnat, Cyrille St. Martin d'Heres, FR 3 23
Gaudin, Gweltaz Grenoble, FR 35 221
Giard, Pascale St. Martin d'Heres, FR 2 9
Lallement, Fabrice Aix-les-Bains, FR 10 55

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