Process for producing a nitride single crystal and apparatus therefor
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United States of America Patent
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Apr 7, 2015
Grant Date -
Mar 26, 2009
app pub date -
Sep 22, 2008
filing date -
Mar 24, 2006
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Abstract
A growth apparatus is used having a plurality of crucibles each for containing the solution, a heating element for heating the crucible, and a pressure vessel for containing at least the crucibles and the heating element and for filling an atmosphere comprising at least nitrogen gas. One seed crystal is put in each of the crucibles to grow the nitride single crystal on the seed crystal.
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