Magnetoresistance element and non-volatile semiconductor storage device using same magnetoresistance element
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United States of America Patent
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Mar 31, 2015
Grant Date -
Sep 13, 2012
app pub date -
Aug 4, 2010
filing date -
Sep 17, 2009
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Abstract
A magnetoresistance element is disclosed. The magnetoresistance element includes a magnetic tunnel junction portion configured by sequentially stacking a perpendicularly magnetized first magnetic body, an insulation layer, and a perpendicularly magnetized second magnetic body. The second magnetic body has a configuration wherein a ferromagnetic layer and a rare earth-transition metal alloy layer are stacked sequentially from the insulation layer side interface. A heat assist layer that heats the second magnetic body with a heat generated based on a current flowing through the magnetic tunnel junction portion is further provided.
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