Block co-polymer photoresist
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United States of America Patent
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Mar 31, 2015
Grant Date -
Aug 15, 2013
app pub date -
Feb 11, 2013
filing date -
Feb 10, 2012
priority date (Note) -
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Abstract
An integrated circuit is made by depositing a pinning layer on a substrate. A block copolymer photoresist is formed on the pinning layer. The block copolymer has two blocks A and B that do not self-assemble under at least some annealing conditions. The exposed block copolymer photoresist is processed to cleave at least some block copolymer bonds in the exposed selected regions. The exposed pinning layer is processed to create a chemical epitaxial pattern to direct the local self assembly of the block copolymer.
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