Amorphous multicomponent dielectric based on the mixture of high band gap and high K materials, respective devices and manufacture
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United States of America Patent
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Mar 24, 2015
Grant Date -
Oct 4, 2012
app pub date -
Aug 5, 2010
filing date -
Aug 5, 2009
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Abstract
High performance thin-film, transistors are entirely processed at temperatures not exceeding 150° C., using amorphous multi component dielectrics based on the mixture of high band gap and high dielectric constant (K) materials. The sputtered or ink jet printed mixed dielectric materials such as Ta2O5 with SiO2 or Al2O3 or HfO2 with SiO2 or Al2O3 are used. These multicomponent dielectrics allow producing amorphous dielectrics to be introduced in high stable electronic devices with low leakage currents, while preserving a high dielectric constant. This results in producing thin film transistors with remarkable electrical properties, such as the ones produced based on Ga—In—Zn oxide as channel layers and where the dielectric was the combination of the mixture Ta2O5:SiO2, exhibiting field-effect mobility exceeding 35 cm2 V−1 s−1, close to 0 V turn-on voltage, on/off ratio higher than 106 and subthreshold slope below 0.24 V dec−1.
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