Method for selective under-etching of porous silicon
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United States of America Patent
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Mar 24, 2015
Grant Date -
Sep 9, 2010
app pub date -
Mar 3, 2010
filing date -
Mar 3, 2009
priority date (Note) -
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Abstract
A method for making a solar cell is disclosed. In accordance with the method of the present invention a composite wafer is formed. The composite layer includes a single crystal silicon wafer, a silicon-based device layer and sacrificial porous silicon sandwiched therebetween. The composite wafer is treated to an aqueous etchant maintained below ambient temperatures to selectively etch the sacrificial porous silicon and release or undercut the silicon-based layer from the single crystal silicon wafer. The released silicon device layer is attached to a substrate to make a solar cell and the released single crystal silicon wafer is reused to make additional silicon device layer.
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