GaN-based Schottky diode having dual metal, partially recessed electrode
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United States of America Patent
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Mar 17, 2015
Grant Date -
May 22, 2014
app pub date -
Nov 16, 2012
filing date -
Nov 16, 2012
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Abstract
A semiconductor device includes a substrate, a first active layer disposed over the substrate and a second active layer disposed on the first active layer. The second active layer has a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer. A first electrode has a first portion disposed in a recess in the second active layer and a second portion disposed on the second active layer such that a Schottky junction is formed therewith. The first portion of the first electrode has a lower Schottky potential barrier than the second portion of the first electrode. A second electrode is in contact with the first active layer. The second electrode establishes an ohmic junction with the first active layer.
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